Because high voltage scanning electron microscopy (HV-SEM) based on-device overlay metrology measures the overlay between 3 layers at least, metrology tool-induced error can significantly impact the mask or process correction, which is based on overlay measurement.
In this work, important use cases for HV-SEM will be explored by simulation, such as HAR hole / trench imaging with various profiles and depths, buried feature imaging to understand detection and effective resolution with depth for optical overlay cases, and buried defect and void detection, using a new improved electron beam simulator which greatly extends utility of JMONSEL, AMAG SimuSEM, enabling many complex simulation scenarios to be achievable with many improved outputs and other augmentations.
Photomask pattern has been traditionally evaluated with limited gauges with 1D cut-line based measurement method on SEM (Scanning Electron Microscopy) image.
In the extreme ultraviolet (EUV) lithography process, stochastic defects are randomly generated and can have a significant impact on the yield of high-volume manufacturing (HVM) when printed even at an extremely low probability down to parts per trillion (ppt) level.
The precise metrology for edge placement error (EPE) is required especially in EUV era. Last year, we proposed new contour extraction algorithm using machine learning and verified the robustness to SEM noise on AEI pattern. In this study,we suggest the method for contour extraction on ADI pattern and improve the EPE measurement accuracy.
At sub10nm nodes of Backend of Line (BEOL) using Extreme Ultraviolet Lithography (EUVL), the requirements of the process window of patterning are extremely tight for parameters such as Critical Dimension (CD) and Overlay which are traditionally managed for the semiconductor process.
The method to perform Optical Proximity Correction (OPC) model calibration with contour-based input data from both small field of view (SFoV) and large field of view (LFoV) e-beam inspection is presented.
Up until now, the main driving force for the semiconductor industry is the continual shrinkage of device feature sizes, thereby incorporating more devices per unit area,
Severe process margin in advanced technology node of semiconductor device is controlled by e-beam metrology system and e-beam inspection system with scanning electron microscopy(SEM)image.
To reduce charging and shrinkage, CD-SEMs utilize low electron energies and multiframe imaging. This results in every next frame being altered due to stage and beam instability,
In a sub 2Xnm node process, the feedback of pattern weak points is more and more significant. Therefore, it is very important to extract the systemic defect in Double Patterning Technology(DPT),
Memory industry has been pursuing endless shrinking technology which increases fabrication complexity. It poses problems between adjacent layers as well as within a single layer.
In order to evaluate a directed self-assembly (DSA) technology for semiconductor device manufacturing, we developed a grapho- and chemohybrid coordinated line epitaxy (COOL) process,
The quality of patterns printed on wafer may be attributed to factors such as process window control, pattern fidelity, overlay performance, and metrology.
As design rule shrink, overlay has been critical factor for semiconductor manufacturing. However, the overlay error which is determined by a conventional measurement with an overlay mark based on IBO and DBO often does not represent the physical placement error in the cell area.
on a 300 mm wafer by applying directed self-assembly (DSA) lithography and pattern transfer for semiconductor device manufacturing. In order to evaluate process performances of DSA,
DRAM chip space is mainly determined by the size of the memory cell array patterns which consist of periodic memory cell features and edges of the periodic array.
Until recent device nodes, lithography has been struggling to improve its resolution limit. Even though next generation lithography technology is now facing various difficulties,
will be installed from this year. EUV mask defect control is the one of the concerns for introducing EUVL to device manufacturing, for current EUV mask defect level is too high to accept for device volume production.
Metrology measurement and defect inspection steps in routes are more pervasive than many people realize and the number continues to grow. Digging deeper,
This paper addresses a methodology for building robust design rules by using design based metrology (DBM). Conventional method for building design rules has been using a simulation tool and a simple pattern spider mask. At the early stage of the device,
As technology node of memory devices is approaching around 30nm, the process window is becoming much narrower and production yield is getting more sensitive to tiny defects which used to be not,
Generally, rule based optical proximity correction (OPC) together with conventional illumination is used for contact layers, because it is simple to handle and processing times are short.
With a die-to-database inspection system using electron beam, we have constructed state-of-the-art verification methodologies for the design for manufacturability (DfM),
We have constructed a hotspot management flow with die-to-database (D2DB) inspection systems of device patterns fabricated by spacer patterning technology,
Recently several Design Based Metrologies (DBMs) are introduced and being in use for wafer verification. The major applications of DBM are OPC accuracy improvement,
The downscaling of the feature size and pitches of the semi-conductor device requires enough process window and good CDU of exposure field for improvement of device characteristics and high yield.
We constructed hot spot management flow with a die-to-database inspection system that is required for both hot spot extraction accuracy and short development turn-around-time (TAT) in low k1 lithography.
Recently several DBMs(Design Based Metrologies) are introduced for the wafer verification and feed back to DFM. The major applications of DBM are OPC accuracy feed back,
A new Robust Process Window Qualification (PWQ) Technique to perform systematic defect characterization to enlarge the Lithographic process window is described,
The specification of photomask patterns is defined for each semiconductor device technology node based on the ITRS (International Technology Roadmap for Semiconductors).
Mask metrology has long been separated into critical dimension (CD) vs. pattern placement (Registration) in terms of both the parametric definitions as well as measurement techniques applied.
K1 factor for development and mass-production of memory devices has been decreased down to below 0.30 in recent years. Process technology has responded with
The downscaling of the feature size and pitches of the semi-conductor device requires the improvement of device characteristics and high yield continuously.
Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. Step and Flash Imprint Lithography (S-FILTM) is a unique method for printing sub-100 nm geometries.
The NGR4000 enables high precision verification of mask features, by matching Scanning Electron Microscope (SEM) images of the mask features to their intended mask design data.
Small feature imprint lithography has existed for several years. The original technique involved the use of a patterned template which is impressed onto a thermo plastic material,
